EP 0968081 A4 20000202 - FLATTENING PROCESS FOR BONDED SEMICONDUCTOR SUBSTRATES
Title (en)
FLATTENING PROCESS FOR BONDED SEMICONDUCTOR SUBSTRATES
Title (de)
PLANARISIERUNGSPROZESS FÜR VERBUNDENE HALBLEITERSUBSTRATE
Title (fr)
PROCEDE D'APLATISSEMENT POUR SUBSTRATS SEMI-CONDUCTEURS LIES
Publication
Application
Priority
- US 9713069 W 19970806
- US 71136096 A 19960904
Abstract (en)
[origin: WO9809804A1] Process for the preparation of a substrate having a semiconductor layer of a target thickness, Tt. In the process, two wafers are bonded face to face to form a substrate wherein one of the wafers has a known thickness, Tknown, and a total thickness variation of less than about 0.75 micrometers and the second wafer comprises a layer of semiconductor material. The substrate is thinned in a first stock removal step to reduce the thickness of the semiconductor layer. The distance between the front and back surfaces of the thinned substrate at discrete positions on said front surface is measured to generate thickness profile data. Additional stock is removed from the front surface of the thinned substrate in a second stock removal step to reduce the thickness of the semiconductor layer to the target thickness, Tt, with the amount of stock being removed at each of said discrete positions being determined after taking into account the thickness profile data, Tt, and Tknown.
IPC 1-7
IPC 8 full level
H01L 21/02 (2006.01); H01L 21/20 (2006.01); H01L 21/304 (2006.01); H01L 21/66 (2006.01); H01L 27/12 (2006.01)
CPC (source: EP KR)
H01L 21/2007 (2013.01 - EP); H01L 21/304 (2013.01 - EP); H01L 21/60 (2021.08 - KR); H01L 22/20 (2013.01 - EP); H01L 22/12 (2013.01 - EP)
Citation (search report)
- [E] EP 0797248 A2 19970924 - SHINETSU HANDOTAI KK [JP]
- [A] US 5413951 A 19950509 - OHORI TATSUYA [JP], et al
- [X] PATENT ABSTRACTS OF JAPAN vol. 1995, no. 5 30 June 1995 (1995-06-30)
- See references of WO 9809804A1
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
WO 9809804 A1 19980312; EP 0968081 A1 20000105; EP 0968081 A4 20000202; JP 2001501368 A 20010130; KR 20010029456 A 20010406; TW 388078 B 20000421
DOCDB simple family (application)
US 9713069 W 19970806; EP 97937023 A 19970806; JP 51264498 A 19970806; KR 19997001730 A 19990302; TW 86112767 A 19970905