Global Patent Index - EP 1055245 A1

EP 1055245 A1 20001129 - SELF-GETTERING ELECTRON FIELD EMITTER AND FABRICATION PROCESS

Title (en)

SELF-GETTERING ELECTRON FIELD EMITTER AND FABRICATION PROCESS

Title (de)

SELBSTGETTER FELDEMISSIONS-ELEKTRONENQUELLE UND HERSTELLUNGSVERFAHREN

Title (fr)

EMETTEUR D'ELECTRONS PAR EFFET DE CHAMP A FIXATION AUTOMATIQUE DES GAZ ET PROCEDE DE FABRICATION AFFERENT

Publication

EP 1055245 A1 20001129 (EN)

Application

EP 98963084 A 19981211

Priority

  • US 9826379 W 19981211
  • US 99062497 A 19971215
  • US 99088797 A 19971215

Abstract (en)

[origin: WO9931698A1] A self-gettering electron field emitter (30) has a first portion (40) formed of a low-work-function material for emitting electrons, and it has an integral second portion (50) that acts both as a low-resistance electrical conductor and as a gettering surface. The self-geterring emitter (30) is formed by disposing a thin film of the low-work-function material parallel to a substrate and by disposing a thin film of the low-resistance geterring material parallel to the substrate and in contact with the thin film of the low-work-function material. The self-geterring emitter (30) is particularly suitable for use in lateral field emission devices (10). The preferred emitter structure has a tapered edge (60), with a salient portion (45) of the low-work-function material extending a small distance beyond an edge (55) of the gettering and low resistance material. A fabrication process (S1-S6) is specially adapted for in situ formation of the self-gettering electron field emitters while fabricating microelectronic field emission devices.

IPC 1-7

H01J 1/02; H01J 1/16; H01J 19/10; H01J 1/62; H01J 63/04; H01J 17/24; H01J 19/70; H01J 61/26

IPC 8 full level

H01J 9/39 (2006.01); H01J 1/304 (2006.01); H01J 7/18 (2006.01); H01J 9/02 (2006.01); H01J 29/94 (2006.01)

CPC (source: EP KR)

H01J 1/02 (2013.01 - KR); H01J 29/94 (2013.01 - EP); H01J 2201/30423 (2013.01 - EP); H01J 2329/00 (2013.01 - EP)

Citation (search report)

See references of WO 9931698A1

Designated contracting state (EPC)

DE FI FR GB NL

DOCDB simple family (publication)

WO 9931698 A1 19990624; AU 1818799 A 19990705; CA 2312845 A1 19990624; CN 1281584 A 20010124; EP 1055245 A1 20001129; JP 2002509336 A 20020326; KR 20010032492 A 20010425

DOCDB simple family (application)

US 9826379 W 19981211; AU 1818799 A 19981211; CA 2312845 A 19981211; CN 98812141 A 19981211; EP 98963084 A 19981211; JP 2000539504 A 19981211; KR 20007005734 A 20000526