Global Patent Index - EP 1055245 A1

EP 1055245 A1 2000-11-29 - SELF-GETTERING ELECTRON FIELD EMITTER AND FABRICATION PROCESS

Title (en)

SELF-GETTERING ELECTRON FIELD EMITTER AND FABRICATION PROCESS

Title (de)

SELBSTGETTER FELDEMISSIONS-ELEKTRONENQUELLE UND HERSTELLUNGSVERFAHREN

Title (fr)

EMETTEUR D'ELECTRONS PAR EFFET DE CHAMP A FIXATION AUTOMATIQUE DES GAZ ET PROCEDE DE FABRICATION AFFERENT

Publication

EP 1055245 A1 (EN)

Application

EP 98963084 A

Priority

  • US 9826379 W
  • US 99062497 A
  • US 99088797 A

Abstract (en)

[origin: WO9931698A1] A self-gettering electron field emitter (30) has a first portion (40) formed of a low-work-function material for emitting electrons, and it has an integral second portion (50) that acts both as a low-resistance electrical conductor and as a gettering surface. The self-geterring emitter (30) is formed by disposing a thin film of the low-work-function material parallel to a substrate and by disposing a thin film of the low-resistance geterring material parallel to the substrate and in contact with the thin film of the low-work-function material. The self-geterring emitter (30) is particularly suitable for use in lateral field emission devices (10). The preferred emitter structure has a tapered edge (60), with a salient portion (45) of the low-work-function material extending a small distance beyond an edge (55) of the gettering and low resistance material. A fabrication process (S1-S6) is specially adapted for in situ formation of the self-gettering electron field emitters while fabricating microelectronic field emission devices.

IPC 1-7 (main, further and additional classification)

H01J 1/02; H01J 1/16; H01J 1/62; H01J 17/24; H01J 19/10; H01J 19/70; H01J 61/26; H01J 63/04

IPC 8 full level (invention and additional information)

H01J 9/39 (2006.01); H01J 1/304 (2006.01); H01J 7/18 (2006.01); H01J 9/02 (2006.01); H01J 29/94 (2006.01)

CPC (invention and additional information)

H01J 29/94 (2013.01); H01J 2201/30423 (2013.01); H01J 2329/00 (2013.01)

Citation (search report)

See references of WO 9931698A1

Designated contracting state (EPC)

DE FI FR GB NL

EPO simple patent family

WO 9931698 A1 19990624; AU 1818799 A 19990705; CA 2312845 A1 19990624; CN 1281584 A 20010124; EP 1055245 A1 20001129; JP 2002509336 A 20020326

INPADOC legal status


2003-03-19 [18D] DEEMED TO BE WITHDRAWN

- Effective date: 20020702

2000-11-29 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20000711

2000-11-29 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A1

- Designated State(s): DE FI FR GB NL