EP 1101248 A2 20010523 - SUBSTRATE FOR HIGH-VOLTAGE MODULES
Title (en)
SUBSTRATE FOR HIGH-VOLTAGE MODULES
Title (de)
SUBSTRAT FÜR HOCHSPANNUNGSMODULE
Title (fr)
SUBSTRAT DE MODULES HAUTE TENSION
Publication
Application
Priority
- DE 9902384 W 19990803
- DE 19835396 A 19980805
Abstract (en)
[origin: WO0008686A2] The invention relates to a substrate for high-voltage modules comprising a ceramic layer with a first main side and a second main side having a first dielectric constant and being located opposite to the first main side. A top metal layer is disposed on the first main side while a bottom metal layer is disposed on the second main side. To reduce field tips, the invention provides for a dielectric layer having a second dielectric constant bordering on the top metal layer and disposed on the first main side of the ceramic layer. The density of the field lines on the edges of the voltage-conducting elements is thus attenuated so that the dielectric constants of the ceramic layer and the dielectric layer match each other.
IPC 1-7
IPC 8 full level
H01L 23/15 (2006.01); H01L 23/373 (2006.01)
CPC (source: EP US)
H01L 23/15 (2013.01 - EP US); H01L 23/3735 (2013.01 - EP US); H01L 2224/45124 (2013.01 - EP US); H01L 2224/48091 (2013.01 - EP US); H01L 2224/48137 (2013.01 - EP US); H01L 2924/13055 (2013.01 - EP US); H01L 2924/181 (2013.01 - EP US); Y10T 428/31 (2015.01 - EP US)
Citation (search report)
See references of WO 0008686A2
Designated contracting state (EPC)
DE FR GB IE
DOCDB simple family (publication)
WO 0008686 A2 20000217; WO 0008686 A3 20000511; EP 1101248 A2 20010523; JP 2002522904 A 20020723; US 2001014413 A1 20010816; US 6440574 B2 20020827
DOCDB simple family (application)
DE 9902384 W 19990803; EP 99952251 A 19990803; JP 2000564234 A 19990803; US 77694801 A 20010205