EP 1175701 A1 20020130 - MEMORY CELL ARRANGEMENT AND METHOD FOR PRODUCING SAME
Title (en)
MEMORY CELL ARRANGEMENT AND METHOD FOR PRODUCING SAME
Title (de)
SPEICHERZELLENANORDNUNG UND VERFAHREN ZU DEREN HERSTELLUNG
Title (fr)
DISPOSITIF MEMOIRE ET PROCEDE DE FABRICATION ASSOCIE
Publication
Application
Priority
- DE 0000932 W 20000327
- DE 19914490 A 19990330
Abstract (en)
[origin: DE19914490C1] A memory cell array, comprising trench conductive structures and upper source/drain regions which overlap over a large area to provide low contact resistance between a capacitor and a transistor, is new. A memory cell array comprises (a) a substrate (1) with intersecting first and second trenches (G1); (b) a transistor upper source/drain region (S/Do) formed in the substrate adjacent two first trenches (G1) and two second trenches; (c) a transistor lower source/drain region located below the upper source/drain region (S/Do); (d) conductive structures (L) located in the first trenches (G1) between the second trenches, each conductive structure adjoining one of the upper source/drain regions (S/Do) at a respective first side wall of the associated first trench and being insulated from the second side wall and the bottom of the first trench (G1) by an insulating structure (I); (e) a word line (W) extending parallel to the first trenches (G1) and having cuffs extending into the second trenches, the word line (W) being arranged over an insulating layer (I2) between the second trenches and located above the upper source/drain region (S/Do); (f) a further insulating layer (I3) arranged on the word line (W) and insulating spacers (Sp) adjacent the sides of the word line (W); and (g) a capacitor connected to the upper source/drain region (S/Do) by a contact (K) which is arranged on the conductive structure (L) and between word lines (W). An Independent claim is also included for production of the above memory cell array.
IPC 1-7
IPC 8 full level
H01L 21/8242 (2006.01); H01L 21/8246 (2006.01); H01L 27/105 (2006.01); H01L 27/108 (2006.01)
CPC (source: EP KR US)
H10B 12/00 (2023.02 - KR); H10B 12/053 (2023.02 - EP US); H10B 12/31 (2023.02 - EP US); H10B 12/34 (2023.02 - EP US)
Citation (search report)
See references of WO 0060667A1
Designated contracting state (EPC)
DE FR GB IE IT
DOCDB simple family (publication)
DE 19914490 C1 20000706; EP 1175701 A1 20020130; JP 2002541667 A 20021203; JP 3875493 B2 20070131; KR 100465040 B1 20050113; KR 20010110478 A 20011213; TW 465088 B 20011121; US 6627940 B1 20030930; WO 0060667 A1 20001012
DOCDB simple family (application)
DE 19914490 A 19990330; DE 0000932 W 20000327; EP 00929252 A 20000327; JP 2000610067 A 20000327; KR 20017012526 A 20010929; TW 89105586 A 20000327; US 93783802 A 20020205