EP 1218945 A1 20020703 - CIRCUIT ARRANGEMENT FOR CREATING A MOS CAPACITOR WITH A LOWER VOLTAGE DEPENDENCY AND A LOWER SURFACE AREA REQUIREMENT
Title (en)
CIRCUIT ARRANGEMENT FOR CREATING A MOS CAPACITOR WITH A LOWER VOLTAGE DEPENDENCY AND A LOWER SURFACE AREA REQUIREMENT
Title (de)
SCHALTUNGSANORDNUNG ZUR BILDUNG EINES MOS-KONDENSATORS MIT GERINGER SPANNUNGSABHÄNGIGKEIT UND GERINGEM FLÄCHENBEDARF
Title (fr)
ENSEMBLE CIRCUIT SERVANT A FORMER UN CONDENSATEUR MOS A FAIBLE DEPENDANCE VIS-A-VIS DE LA TENSION ET A FAIBLE ENCOMBREMENT
Publication
Application
Priority
- DE 0003479 W 20000929
- DE 19947116 A 19990930
- DE 19946977 A 19990930
- DE 19961487 A 19991220
Abstract (en)
[origin: WO0124277A1] The invention relates to a circuit arrangement, comprising short-channel MOS transistors (T1, T2) of the same channel type which are not connected in series or parallel and in particular, to their exclusive depletion mode in the required voltage area. The circuit arrangement achieves a considerable increase in the effective capacitance (A, B) in relation to circuit arrangements comprising conventional long channel MOS transistors, by the use of extrinsic capacitances. Said circuits reduce both the surface area requirement and costs.
IPC 1-7
IPC 8 full level
H01L 27/08 (2006.01); H01L 29/94 (2006.01)
CPC (source: EP US)
H01L 27/0805 (2013.01 - EP US); H01L 29/94 (2013.01 - EP US)
Citation (search report)
See references of WO 0124277A1
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
WO 0124277 A1 20010405; EP 1218945 A1 20020703; US 2002135044 A1 20020926; US 6700149 B2 20040302
DOCDB simple family (application)
DE 0003479 W 20000929; EP 00978967 A 20000929; US 11342102 A 20020401