EP 1287554 A2 20030305 - SHIELDING OF ANALOG CIRCUITS ON SEMICONDUCTOR SUBSTRATES
Title (en)
SHIELDING OF ANALOG CIRCUITS ON SEMICONDUCTOR SUBSTRATES
Title (de)
ABSCHRMUNG ANALOGER SCHALTKREISE AUF EINEM HALBLEITERSUBSTRAT
Title (fr)
BLINDAGE DE CIRCUITS ANALOGIQUES SUR DES SUBSTRATS SEMICONDUCTEURS
Publication
Application
Priority
- US 0118153 W 20010605
- US 58824300 A 20000606
Abstract (en)
[origin: WO0195389A2] A semiconductor device, in accordance with the present invention, includes a doped semiconductor substrate (102) wherein the doping of the substrate has a first conductivity and a device region (110) formed near a surface of the substrate. The device region includes at least one device well. A buried well (104) is formed in the substrate below the device region. The buried well is doped with dopants having a second conductivity. A trench region (124) surrounds the device region and extends below the surface of the substrate to at least the buried well such that the device region is isolated from other portions of the substrate by the buried well and the trench region.
IPC 1-7
IPC 8 full level
H01L 21/761 (2006.01); H01L 21/762 (2006.01)
CPC (source: EP KR)
H01L 21/761 (2013.01 - EP); H01L 21/76224 (2013.01 - EP); H01L 21/765 (2013.01 - KR)
Citation (search report)
See references of WO 0195389A2
Designated contracting state (EPC)
DE FR IT
DOCDB simple family (publication)
WO 0195389 A2 20011213; WO 0195389 A3 20020418; EP 1287554 A2 20030305; KR 20030007881 A 20030123
DOCDB simple family (application)
US 0118153 W 20010605; EP 01946084 A 20010605; KR 20027016589 A 20021205