EP 1396026 A2 20040310 - DRAM CELL ARRANGEMENT WITH VERTICAL MOS TRANSISTORS AND METHOD FOR THE PRODUCTION THEREOF
Title (en)
DRAM CELL ARRANGEMENT WITH VERTICAL MOS TRANSISTORS AND METHOD FOR THE PRODUCTION THEREOF
Title (de)
DRAM-ZELLENANORDNUNG MIT VERTIKALEN MOS-TRANSISTOREN UND VERFAHREN ZU DEREN HERSTELLUNG
Title (fr)
DISPOSITIF DE CELLULES DRAM COMPORTANT DES TRANSISTORS MOS VERTICAUX ET PROCEDE DE FABRICATION
Publication
Application
Priority
- DE 10125967 A 20010529
- EP 0205651 W 20020523
Abstract (en)
[origin: DE10125967C1] The channel regions, which are arranged along one of the columns of the storage cell matrix, are parts of a connecting element surrounded by a gate dielectric layer. The gate electrodes of the MOS transistors of a row are parts of a strip-shaped word line. According to the invention, a vertical double gate MOS transistor having gate electrodes, which are formed in the trenches on both sides of the assigned connecting element, of the assigned word line, is provided at each point of intersection of the storage cell matrix.
IPC 1-7
IPC 8 full level
H01L 21/02 (2006.01); H01L 21/336 (2006.01); H01L 21/8242 (2006.01); H01L 27/108 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01)
CPC (source: EP KR US)
H10B 12/00 (2023.02 - KR); H10B 12/036 (2023.02 - EP US); H10B 12/053 (2023.02 - EP US); H10B 12/033 (2023.02 - EP US)
Citation (search report)
See references of WO 02097891A2
Designated contracting state (EPC)
FR GB IE IT NL
DOCDB simple family (publication)
DE 10125967 C1 20020711; CN 1290198 C 20061213; CN 1513208 A 20040714; EP 1396026 A2 20040310; JP 2004527920 A 20040909; KR 100567495 B1 20060403; KR 20040005997 A 20040116; TW 569397 B 20040101; US 2004259312 A1 20041223; US 2005253180 A1 20051117; US 6939763 B2 20050906; US 7329916 B2 20080212; WO 02097891 A2 20021205; WO 02097891 A3 20031009
DOCDB simple family (application)
DE 10125967 A 20010529; CN 02810908 A 20020523; EP 0205651 W 20020523; EP 02740639 A 20020523; JP 2003500975 A 20020523; KR 20037015568 A 20031128; TW 91110504 A 20020520; US 15843905 A 20050622; US 72073003 A 20031124