EP 1399972 A2 20040324 - MEMORY CELL, MEMORY CELL CONFIGURATION AND METHOD FOR PRODUCING THE SAME
Title (en)
MEMORY CELL, MEMORY CELL CONFIGURATION AND METHOD FOR PRODUCING THE SAME
Title (de)
SPEICHERZELLE, SPEICHERZELLENANORDNUNG UND HERSTELLUNGSVERFAHREN
Title (fr)
CELLULE DE MEMOIRE, DISPOSITIF A CELLULES DE MEMOIRE, ET PROCEDE DE FABRICATION Y RELATIF
Publication
Application
Priority
- DE 0202141 W 20020612
- DE 10129958 A 20010621
Abstract (en)
[origin: WO03001600A2] The invention relates to memory transistors with trenched gate electrodes (2) and an ONO memory layer sequence (5, 6, 7), whose source/drain regions (3, 4) are associated with an electroconductive layer (8) or layer sequence that has a strip-shaped structure that corresponds to the bit lines. Said layer especially comprises a metal silicide or a polysilicon layer (14) with a metallic layer (15) applied thereto that reduces the ohmic resistance of the trenched bit lines. The metal silicide is preferably a cobalt silicide, the metallic layer is preferably a tungsten silicide or WN/W.
IPC 1-7
IPC 8 full level
H01L 21/8247 (2006.01); H01L 21/336 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H10B 20/00 (2023.01); H10B 43/30 (2023.01); H10B 69/00 (2023.01)
CPC (source: EP KR US)
H01L 27/105 (2013.01 - US); H01L 29/66833 (2013.01 - EP US); H10B 43/30 (2023.02 - EP US); H10B 69/00 (2023.02 - EP KR US)
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
WO 03001600 A2 20030103; WO 03001600 A3 20030821; CN 100524774 C 20090805; CN 1526170 A 20040901; DE 10129958 A1 20030109; DE 10129958 B4 20060713; EP 1399972 A2 20040324; JP 2004531084 A 20041007; JP 3976729 B2 20070919; KR 100629383 B1 20060929; KR 20040007749 A 20040124; TW 567612 B 20031221; US 2003006428 A1 20030109; US 2003151091 A1 20030814; US 6548861 B2 20030415; US 6794249 B2 20040921
DOCDB simple family (application)
DE 0202141 W 20020612; CN 02812513 A 20020612; DE 10129958 A 20010621; EP 02742805 A 20020612; JP 2003507893 A 20020612; KR 20037016748 A 20031222; TW 91113148 A 20020617; US 37810103 A 20030228; US 90064901 A 20010706