EP 1412949 A1 20040428 - MEMORY AND METHOD FOR AN IMPROVED SENSING
Title (en)
MEMORY AND METHOD FOR AN IMPROVED SENSING
Title (de)
HALBLEITERSPEICHER MIT VERBESSERTER LESEANORDNUNG SOWIE ZUGEHÖRIGE BETRIEBSART
Title (fr)
MEMOIRE A SEMI-CONDUCTEUR AVEC ENSEMBLE DE LECTURE AMELIORE, ET SON MODE DE FONCTIONNEMENT
Publication
Application
Priority
- DE 0202715 W 20020724
- DE 10137120 A 20010730
Abstract (en)
[origin: WO03015103A1] A selection transistor (2) for a group of memory cells, preferably 16-32 memory cells, is respectively introduced into the feed lines to the memory cells (4) The selection transistor is opened to a line group for reading, while the control gates of all lines are low potential and the current for each reading column leading through said line group is measured and stored. In a second step, the control gate (5) of the line to be read is brought to a higher reading potential and the resulting current is compared to the previous current.
IPC 1-7
IPC 8 full level
G11C 16/06 (2006.01); G11C 16/26 (2006.01)
CPC (source: EP US)
G11C 16/26 (2013.01 - EP US)
Citation (search report)
See references of WO 03015103A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR
DOCDB simple family (publication)
WO 03015103 A1 20030220; CN 1537311 A 20041013; DE 10137120 A1 20030220; DE 10137120 B4 20090219; EP 1412949 A1 20040428; JP 2004538597 A 20041224; JP 2006351201 A 20061228; US 2004218417 A1 20041104; US 6940755 B2 20050906
DOCDB simple family (application)
DE 0202715 W 20020724; CN 02815093 A 20020724; DE 10137120 A 20010730; EP 02754426 A 20020724; JP 2003519944 A 20020724; JP 2006271292 A 20061002; US 76898804 A 20040130