EP 1504472 A1 20050209 - FLASH MEMORY CELL AND PRODUCTION METHOD
Title (en)
FLASH MEMORY CELL AND PRODUCTION METHOD
Title (de)
FLASH-SPEICHERZELLE UND HERSTELLUNGSVERFAHREN
Title (fr)
CELLULE DE MEMOIRE FLASH ET SON PROCEDE DE PRODUCTION
Publication
Application
Priority
- DE 0301488 W 20030509
- DE 10220922 A 20020510
Abstract (en)
[origin: WO03096425A1] Disclosed are memory cells which are configured as trench transistors and each of which comprises a floating gate electrode (7) and a control gate electrode (9) on one wall of the trench above a channel region that is located between doped areas (14) for source and drain. Said memory cells are provided with a gate electrode (14) which is disposed in another trench and via which the channel region that is located within a semiconductor segment (13) between the trenches can additionally be triggered. The gate oxide (11) of the gate electrode (12) can be configured in a very thin manner such that a high reading flow is obtained in spite of good data management during triggering via the gate electrode.
IPC 1-7
H01L 27/12; H01L 27/115; H01L 21/84; H01L 21/8247; H01L 21/28; H01L 29/788
IPC 8 full level
G11C 16/04 (2006.01); H01L 21/28 (2006.01); H01L 21/8247 (2006.01); H01L 21/84 (2006.01); H01L 27/115 (2006.01); H01L 27/12 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01)
CPC (source: EP KR US)
G11C 16/0491 (2013.01 - EP KR US); H01L 21/84 (2013.01 - EP KR US); H01L 27/1203 (2013.01 - EP KR US); H01L 29/40114 (2019.07 - EP US); H01L 29/7881 (2013.01 - EP KR US); H10B 41/30 (2023.02 - EP KR US); H10B 41/40 (2023.02 - KR); H10B 69/00 (2023.02 - EP US)
Citation (search report)
See references of WO 03096425A1
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
WO 03096425 A1 20031120; CN 100379004 C 20080402; CN 1653616 A 20050810; DE 10220922 A1 20031127; DE 10220922 B4 20060928; EP 1504472 A1 20050209; JP 2005530336 A 20051006; KR 100599942 B1 20060712; KR 20040102226 A 20041203; TW 200404365 A 20040316; TW I226702 B 20050111; US 2005146940 A1 20050707; US 6979859 B2 20051227
DOCDB simple family (application)
DE 0301488 W 20030509; CN 03810590 A 20030509; DE 10220922 A 20020510; EP 03749842 A 20030509; JP 2004504298 A 20030509; KR 20047018155 A 20030509; TW 92112047 A 20030501; US 99134204 A 20041109