Global Patent Index - EP 1506579 A2

EP 1506579 A2 20050216 - SCHOTTKY BARRIER CMOS DEVICE AND METHOD

Title (en)

SCHOTTKY BARRIER CMOS DEVICE AND METHOD

Title (de)

CMOS BAUELEMENT MIT EINER SCHOTTKY-BARRIERE UND VERFAHREN

Title (fr)

DISPOSITIF CMOS A BARRIERE DE SCHOTTKY ET PROCEDE

Publication

EP 1506579 A2 20050216 (EN)

Application

EP 03734043 A 20030516

Priority

  • US 0315367 W 20030516
  • US 38123802 P 20020516
  • US 38123902 P 20020516
  • US 38124002 P 20020516
  • US 38132002 P 20020516
  • US 38132102 P 20020516
  • US 38865902 P 20020516
  • US 38123702 P 20020516
  • US 38123602 P 20020516
  • US 38116202 P 20020516
  • US 21544702 A 20020809
  • US 23668502 A 20020906
  • US 34259003 A 20030115
  • US 44571103 P 20030207

Abstract (en)

[origin: WO03098693A2] A CMOS device and method of fabrication are disclosed. The present invention utilizes Schottky barrier contacts for source and/or drain contact fabrication within the context of a CMOS device and CMOS integrated circuits, to eliminate the requirement for halo/pocket implants, shallow source/drain extensions to control short channel effects, well implant steps, and complex device isolation steps. Additionally, the present invention eliminates the parasitic bipolar gain associated with CMOS device operation, reduces manufacturing costs, tightens control of device performance parameters, and provides for superior device characteristics as compared to the prior art. The present invention, in one embodiment, uses a silicide exclusion mask process to form the dual silicide Schottky barrier source and/or drain contact for the complimentary PMOS and NMOS devices forming the CMOS device.

IPC 1-7

H01L 27/095; H01L 21/8238

IPC 8 full level

H01L 27/095 (2006.01); H01L 29/51 (2006.01); H01L 21/336 (2006.01); H01L 29/78 (2006.01)

CPC (source: EP)

H01L 21/28185 (2013.01); H01L 27/095 (2013.01); H01L 29/517 (2013.01); H01L 29/66643 (2013.01); H01L 29/7839 (2013.01)

Citation (search report)

See references of WO 03098693A2

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

DOCDB simple family (publication)

WO 03098693 A2 20031127; WO 03098693 A3 20041021; AU 2003239475 A1 20031202; CN 1669145 A 20050914; EP 1506579 A2 20050216; JP 2006514424 A 20060427

DOCDB simple family (application)

US 0315367 W 20030516; AU 2003239475 A 20030516; CN 03816343 A 20030516; EP 03734043 A 20030516; JP 2004506087 A 20030516