Global Patent Index - EP 1540736 A2

EP 1540736 A2 20050615 - WAFER-LEVEL SEAL FOR NON-SILICON-BASED DEVICES

Title (en)

WAFER-LEVEL SEAL FOR NON-SILICON-BASED DEVICES

Title (de)

VERSIEGELUNG AUF WAFEREBENE FÜR NICHT AUF SILIZIUM BASIERENDE BAUELEMENTE

Title (fr)

JOINT SITUE AU NIVEAU PLAQUETTE POUR DISPOSITIFS EXEMPTS DE SILICIUM

Publication

EP 1540736 A2 20050615 (EN)

Application

EP 03791559 A 20030609

Priority

  • US 0318103 W 20030609
  • US 23135602 A 20020828
  • US 23135702 A 20020828

Abstract (en)

[origin: WO2004021398A2] One embodiment disclosed relates to a method (100) for sealing an active area of a non-silicon-based device on a wafer. The method includes providing (104) a sacrificial material over at least the active area of the non-silicon-based device, depositing (108) a seal coating over the wafer so that the seal coating covers the sacrificial material, and replacing (112, 114) the sacrificial material with a target atmosphere. Another embodiment disclosed relates to an SAW device sealed at the wafer level (i.e. prior to separation of the die from the wafer). The device includes an active area to be protected, an electrical contact area (4), and a lithographically-formed structure (24) sealing at least the active area and leaving at least a portion of the electrical contact area (4) exposed.

IPC 1-7

H01L 29/72

IPC 8 full level

H01L 23/02 (2006.01); B81B 7/00 (2006.01); H03H 3/08 (2006.01); H03H 9/02 (2006.01); H03H 9/10 (2006.01); H03H 9/145 (2006.01)

CPC (source: EP KR)

B81C 1/00293 (2013.01 - EP); H01L 23/48 (2013.01 - KR); H03H 3/08 (2013.01 - EP); H03H 9/02921 (2013.01 - EP); H03H 9/02984 (2013.01 - EP); H03H 9/1092 (2013.01 - EP); B81C 2203/0136 (2013.01 - EP)

Designated contracting state (EPC)

DE FR GB IT

DOCDB simple family (publication)

WO 2004021398 A2 20040311; WO 2004021398 A3 20040603; AU 2003243451 A1 20040319; AU 2003243451 A8 20040319; EP 1540736 A2 20050615; EP 1540736 A4 20060308; JP 2005537661 A 20051208; KR 20050044799 A 20050512

DOCDB simple family (application)

US 0318103 W 20030609; AU 2003243451 A 20030609; EP 03791559 A 20030609; JP 2004532581 A 20030609; KR 20057003297 A 20050225