EP 1561245 A2 20050810 - MONOLITHICALLY INTEGRATED VERTICAL PIN PHOTODIODE USED IN BICMOS TECHNOLOGY
Title (en)
MONOLITHICALLY INTEGRATED VERTICAL PIN PHOTODIODE USED IN BICMOS TECHNOLOGY
Title (de)
MONOLITHISCH INTEGRIERTE VERTIKALE PIN-FOTODIODE IN BICMOS-TECHNOLOGIE
Title (fr)
PHOTODIODE PIN VERTICALE A INTEGRATION MONOLITHIQUE DANS LE CADRE DE LA TECHNOLOGIE BICMOS
Publication
Application
Priority
- DE 0303739 W 20031112
- DE 10252878 A 20021112
Abstract (en)
[origin: WO2004044994A2] The invention relates to a monolithically integrated vertical pin photodiode which is produced according to BiCMOS technology and comprises a planar surface (30) facing the light (h <) and a rear face (31), and anode connections (A1, A2) located across p areas (20, 21) on a top face of the photodiode. An i zone of the pin photodiode is formed by combining a low doped first p<-> epitaxial layer (10, d10) which has a maximum thickness of essentially 15ñm and a doping concentration of less than 5*10<14> cm<-3> and is placed on a particularly high doped p substrate (10), with a low doped second n<-> epitaxial layer (9) that borders the first layer (10) and has a doping concentration ranging substantially between 10<14> cm<-3> and 10<15> cm<-3>, an n<+> cathode (K) of the pin photodiode being integrated into said second layer (9). p areas (20, 21) delimit the second n epitaxial layer (9) in a latent direction while another anode-connecting area (A3) of the pin diode is provided on the rear face (31) in addition to the anode connections (A1, A2).
IPC 1-7
IPC 8 full level
H01L 21/8249 (2006.01); H01L 31/0224 (2006.01); H01L 31/0352 (2006.01); H01L 31/105 (2006.01)
CPC (source: EP US)
H01L 31/105 (2013.01 - EP US); H01L 31/1055 (2013.01 - EP US)
Citation (search report)
See references of WO 2004044994A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2004044994 A2 20040527; WO 2004044994 A3 20050407; WO 2004044994 A9 20040722; AU 2003291934 A1 20040603; DE 10252878 A1 20040603; DE 10394078 D2 20051006; EP 1561245 A2 20050810; US 2007018268 A1 20070125; US 7535074 B2 20090519
DOCDB simple family (application)
DE 0303739 W 20031112; AU 2003291934 A 20031112; DE 10252878 A 20021112; DE 10394078 T 20031112; EP 03767422 A 20031112; US 53430403 A 20031112