EP 1661242 A1 20060531 - TRANSISTOR ARRANGEMENT, INTEGRATED CIRCUIT AND METHOD FOR OPERATING FIELD EFFECT TRANSISTORS
Title (en)
TRANSISTOR ARRANGEMENT, INTEGRATED CIRCUIT AND METHOD FOR OPERATING FIELD EFFECT TRANSISTORS
Title (de)
TRANSISTOR-ANORDNUNG, INTEGRIERTER SCHALTKREIS UND VERFAHREN ZUM BETREIBEN VON FELDEFFEKTTRANSISTOREN
Title (fr)
ENSEMBLE DE TRANSISTORS, CIRCUIT DE COMMUTATION INTEGRE ET PROCEDE DE FONCTIONNEMENT DE TRANSISTORS A EFFET DE CHAMP
Publication
Application
Priority
- DE 2004001941 W 20040901
- DE 10340846 A 20030904
Abstract (en)
[origin: WO2005025055A1] The transistor arrangement contains a first and a second field effect transistor comprising a first and a second source drain connection and a control connection for applying a first or a second signal. The two field effect transistors are of the same conductive type. The transistor arrangement is configured in such a manner that the first signal can be applied in an alternating manner to the control connection of the first field effect transistor and the second signal can be applied in a simultaneous manner to the control connection of the second field effect transistor, and/or the second signal can be applied to the control connection of the first field effect transistor and the first signal can be applied simultaneously to the control connection of the second field effect transistor.
IPC 1-7
IPC 8 full level
H03F 1/26 (2006.01); H03F 3/21 (2006.01); H03F 3/72 (2006.01)
CPC (source: EP US)
H03F 1/26 (2013.01 - EP US); H03F 3/211 (2013.01 - EP US); H03F 3/72 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US); H03F 2203/21178 (2013.01 - EP US); H03F 2203/7215 (2013.01 - EP US)
Citation (search report)
See references of WO 2005025055A1
Designated contracting state (EPC)
DE
DOCDB simple family (publication)
WO 2005025055 A1 20050317; CN 100566144 C 20091202; CN 1879296 A 20061213; DE 10340846 A1 20050504; EP 1661242 A1 20060531; US 2007176634 A1 20070802; US 7733156 B2 20100608
DOCDB simple family (application)
DE 2004001941 W 20040901; CN 200480032739 A 20040901; DE 10340846 A 20030904; EP 04786703 A 20040901; US 57092404 A 20040901