EP 1706901 A1 20061004 - INTEGRATED CIRCUIT COMPRISING LATERALLY DIELECTRICALLY ISOLATED ACTIVE REGIONS ABOVE AN ELECTRICALLY CONTACTED BURIED MATERIAL, AND METHOD FOR PRODUCING THE SAME
Title (en)
INTEGRATED CIRCUIT COMPRISING LATERALLY DIELECTRICALLY ISOLATED ACTIVE REGIONS ABOVE AN ELECTRICALLY CONTACTED BURIED MATERIAL, AND METHOD FOR PRODUCING THE SAME
Title (de)
INTEGRIERTE SCHALTUNG MIT LATERALER DIELEKTRISCHER ISOLATION AKTIVER BEREICHE ÜBER ELEKTRISCH KONTAKTIERTEM VERGRABENEM MATERIAL UND HERSTELLUNGSVERFAHREN
Title (fr)
CIRCUIT INTEGRE POURVU DE ZONES ACTIVES A ISOLATION DIELECTRIQUE LATERALE SUR UN MATERIAU ENFOUI DE CONTACT ELECTRIQUE ET SON PROCEDE DE PRODUCTION
Publication
Application
Priority
- EP 2005000571 W 20050121
- DE 102004004512 A 20040123
Abstract (en)
[origin: WO2005071737A1] The invention relates to an integrated circuit comprising a first layer (12) consisting of an active semiconductor material extending along a first side (14) of a buried layer (16), and trench structures (18, 38) that cut through the layer (12) of active semiconductor material and have dielectric wall regions (42, 44). Said dielectric wall regions (42, 44) electrically isolate partial regions (52, 54, 56) of the layer (12) of active semiconductor material in the lateral direction, and the trench structures (18, 38) also comprise first inner regions (46) that are filled with an electroconductive material and electroconductively contact the buried layer (16). The integrated circuit is characterised in that first wall regions (42) of the trench structures (18, 38) completely cut through the buried layer (16), and second wall regions (44) of the trench structures (18, 38) protrude into the buried layer (16), without completely cutting the same. The invention also relates to a method for producing one such integrated circuit.
IPC 8 full level
H01L 21/62 (2006.01); H01L 21/74 (2006.01); H01L 21/762 (2006.01); H01L 21/763 (2006.01)
CPC (source: EP US)
H01L 21/76286 (2013.01 - EP US); H01L 21/763 (2013.01 - EP US)
Citation (search report)
See references of WO 2005071737A1
Designated contracting state (EPC)
DE FR
DOCDB simple family (publication)
WO 2005071737 A1 20050804; CN 1934696 A 20070321; DE 102004004512 A1 20050818; DE 102004004512 B4 20080710; EP 1706901 A1 20061004; US 2006255387 A1 20061116; US 7816758 B2 20101019
DOCDB simple family (application)
EP 2005000571 W 20050121; CN 200580009361 A 20050121; DE 102004004512 A 20040123; EP 05706945 A 20050121; US 49117206 A 20060724