Global Patent Index - EP 1829117 A1

EP 1829117 A1 20070905 - METHOD FOR PRODUCTION OF A THIN-LAYER SOLAR CELL WITH MICROCRYSTALLINE SILICON AND LAYER SEQUENCE

Title (en)

METHOD FOR PRODUCTION OF A THIN-LAYER SOLAR CELL WITH MICROCRYSTALLINE SILICON AND LAYER SEQUENCE

Title (de)

VERFAHREN ZUR HERSTELLUNG EINER DÜNNSCHICHTSOLARZELLE MIT MIKROKRISTALLINEM SILIZIUM SOWIE SCHICHTFOLGE

Title (fr)

PROCEDE DE PRODUCTION D'UNE CELLULE SOLAIRE EN COUCHES MINCES A SILICIUM MONOCRISTALLIN ET SUCCESSION DE COUCHES

Publication

EP 1829117 A1 20070905 (DE)

Application

EP 05825838 A 20051213

Priority

  • DE 2005002237 W 20051213
  • DE 102004061360 A 20041221

Abstract (en)

[origin: WO2006066544A1] The invention relates to a method for production of a thin-layer solar cell with microcrystalline silicon and a layer sequence. According to the invention, a microcrystalline silicon layer is applied to the lower p- or n-layer in pin or nip thin-layer solar cells, by means of a HWCVD method before the application of the microcrystalline i-layer. The efficiency of the solar cell is hence increased by up to 0.8 % absolute.

IPC 8 full level

H01L 31/18 (2006.01); H01L 31/077 (2012.01)

CPC (source: EP KR US)

H01L 31/03685 (2013.01 - EP US); H01L 31/0445 (2014.12 - KR); H01L 31/075 (2013.01 - KR); H01L 31/077 (2013.01 - EP US); H01L 31/1824 (2013.01 - EP US); Y02E 10/545 (2013.01 - EP US); Y02E 10/547 (2013.01 - EP); Y02E 10/548 (2013.01 - EP US); Y02P 70/50 (2015.11 - EP US)

Citation (search report)

See references of WO 2006066544A1

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

DOCDB simple family (publication)

WO 2006066544 A1 20060629; AU 2005318723 A1 20060629; AU 2005318723 B2 20111201; CN 101088171 A 20071212; CN 101088171 B 20130320; DE 102004061360 A1 20060713; EP 1829117 A1 20070905; JP 2008524863 A 20080710; JP 5336084 B2 20131106; KR 101326671 B1 20131108; KR 20070090235 A 20070905; US 2009007964 A1 20090108; US 2012067411 A1 20120322; US 8110246 B2 20120207; US 8664522 B2 20140304

DOCDB simple family (application)

DE 2005002237 W 20051213; AU 2005318723 A 20051213; CN 200580044170 A 20051213; DE 102004061360 A 20041221; EP 05825838 A 20051213; JP 2007547162 A 20051213; KR 20077015447 A 20051213; US 201113286359 A 20111101; US 79369005 A 20051213