EP 1835374 A1 20070919 - Device and method of adapting the potential of the substrate of an MOS transistor
Title (en)
Device and method of adapting the potential of the substrate of an MOS transistor
Title (de)
Vorrichtung und Verfahren zur Anpassung des Potenzials des Substrats eines MOS-Transistors
Title (fr)
Dispositif et procédé d'adaptation du potentiel du substrat d'un transistor MOS
Publication
Application
Priority
FR 0650938 A 20060317
Abstract (en)
The circuit (30) has a casing enclosing a substrate (B) e.g. silicon on insulator (SOI), of a MOS power transistor (MSW) e.g. N-channel MOS power transistor, for ensuring an electric insulation of the substrate. A capacitor (C1) is connected to the substrate with a source (SP) that provides a source voltage (Vp) with two values during two periods, respectively, where one period is lower than half of the other period. An independent claim is also included for a method for biasing a substrate of a MOS transistor.
Abstract (fr)
L'invention concerne un circuit (30) de polarisation du substrat (B) d'un transistor MOS (MSW) comprenant un élément capacitif (C 1 ) reliant le substrat (B) du transistor MOS à une source (SP) d'une tension (V P ) alternative.
IPC 8 full level
G05F 3/20 (2006.01)
CPC (source: EP US)
G05F 3/205 (2013.01 - EP US)
Citation (applicant)
US 4491746 A 19850101 - KOIKE HIDEHARU [JP]
Citation (search report)
- [XA] US 4491746 A 19850101 - KOIKE HIDEHARU [JP]
- [A] US 5184030 A 19930202 - CHUNG JIN Y [KR], et al
- [A] US 5210446 A 19930511 - NIUYA TAKAYUKI [JP], et al
- [A] US 6175263 B1 20010116 - LEE KYU-CHAN [KR], et al
Designated contracting state (EPC)
DE FR GB IT
Designated extension state (EPC)
AL BA HR MK YU
DOCDB simple family (publication)
EP 1835374 A1 20070919; EP 1835374 B1 20150722; US 2007262809 A1 20071115; US 7622983 B2 20091124
DOCDB simple family (application)
EP 07104336 A 20070316; US 68704707 A 20070316