EP 1929550 A1 20080611 - OPTOELECTRONIC SEMICONDUCTOR CHIP
Title (en)
OPTOELECTRONIC SEMICONDUCTOR CHIP
Title (de)
OPTOELEKTRONISCHER HALBLEITERCHIP
Title (fr)
PUCE A SEMI-CONDUCTEUR OPTO-ELECTRONIQUE
Publication
Application
Priority
- DE 2006001615 W 20060914
- DE 102005047168 A 20050930
Abstract (en)
[origin: WO2007036197A1] An optoelectronic semiconductor chip which emits during its operation electromagnetic radiation from its front side (7) comprises: a series (1) of semiconductor layers with an active zone (4) suitable for generating the electromagnetic radiation and a self-supporting, electroconducting mechanical supporting layer (10) which is formed on the series of semiconductor layers, mechanically supports the series (1) of semiconductor layers and is transparent to the radiation from the semiconductor chip.
IPC 8 full level
H01L 33/00 (2010.01); H01L 33/42 (2010.01); H01L 33/10 (2010.01); H01L 33/22 (2010.01)
CPC (source: EP US)
H01L 33/0093 (2020.05 - EP US); H01L 33/42 (2013.01 - EP US); H01L 33/10 (2013.01 - EP US); H01L 33/22 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US)
Citation (search report)
See references of WO 2007036197A1
Citation (examination)
US 5008718 A 19910416 - FLETCHER ROBERT M [US], et al
Designated contracting state (EPC)
DE
DOCDB simple family (publication)
WO 2007036197 A1 20070405; CN 101278412 A 20081001; DE 102005047168 A1 20070412; EP 1929550 A1 20080611; JP 2009510736 A 20090312; KR 20080069593 A 20080728; TW 200717877 A 20070501; US 2009121245 A1 20090514
DOCDB simple family (application)
DE 2006001615 W 20060914; CN 200680036091 A 20060914; DE 102005047168 A 20050930; EP 06818007 A 20060914; JP 2008532582 A 20060914; KR 20087010542 A 20080430; TW 95134951 A 20060921; US 99284306 A 20060914