EP 2074649 A2 20090701 - A MULTI-TRANSISTOR BASED NON-VOLATILE MEMORY CELL WITH DUAL THRESHOLD VOLTAGE
Title (en)
A MULTI-TRANSISTOR BASED NON-VOLATILE MEMORY CELL WITH DUAL THRESHOLD VOLTAGE
Title (de)
NICHT FLÜCHTIGE SPEICHERZELLE MIT DOPPELSCHWELLENSPANNUNG AUF BASIS MEHRERER TRANSISTOREN
Title (fr)
CELLULE DE MÉMOIRE NON VOLATILE À PLUSIEURS TRANSISTORS DOTÉE D'UNE TENSION DE SEUIL DOUBLE
Publication
Application
Priority
- IB 2007053911 W 20070926
- EP 06121535 A 20060929
- EP 07826550 A 20070926
Abstract (en)
[origin: WO2008038236A2] A multi-transistor based non- volatile memory cell Ml arranged on a semiconductor substrate 1 includes at least one access transistor ATI; AT2; AT2'; AT2" and at least one memory transistor TM2a; TM2b; TM2c; TM2d. The at least one access transistor is a "normally-off ' transistor and includes first and second diffusion regions Sl, S2, an access channel region Rl, and an access gate AG. The access channel region is intermediate the first and second diffusion regions. The at least one memory transistor includes third and fourth diffusion regions S2, S3, a channel region R2, a charge trapping element O1-N-O2 and a control gate CG. The channel region is intermediate the third and fourth diffusion regions, and the charge trapping element is above the channel region with the control gate being arranged above the charge trapping element. The semiconductor substrate is of a first conductivity type. The at least one memory transistor is provided with a memory threshold voltage window with an upper limit above and a lower limit below zero Volt.
IPC 8 full level
H01L 21/336 (2006.01); G11C 16/04 (2006.01); H01L 21/28 (2006.01); H01L 21/8247 (2006.01); H01L 27/115 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01)
CPC (source: EP)
H01L 29/66833 (2013.01); H01L 29/792 (2013.01); H10B 43/30 (2023.02); H10B 69/00 (2023.02); G11C 16/0466 (2013.01); H01L 29/40114 (2019.07); H01L 29/40117 (2019.07); H01L 29/66825 (2013.01); H01L 29/7881 (2013.01); H10B 41/35 (2023.02)
Citation (search report)
See references of WO 2008038236A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA HR MK RS
DOCDB simple family (publication)
WO 2008038236 A2 20080403; WO 2008038236 A3 20080703; CN 101523580 A 20090902; EP 2074649 A2 20090701
DOCDB simple family (application)
IB 2007053911 W 20070926; CN 200780036189 A 20070926; EP 07826550 A 20070926