EP 2188810 A2 20100526 - MEMORY POINT OF STATIC MEMORY AND APPLICATION FOR AN IMAGE SENSOR
Title (en)
MEMORY POINT OF STATIC MEMORY AND APPLICATION FOR AN IMAGE SENSOR
Title (de)
SPEICHERPUNKT EINES STATISCHEN SPEICHERS UND ANWENDUNG FÜR EINEN BILDSENSOR
Title (fr)
POINT MEMOIRE DE MEMOIRE STATIQUE ET APPLICATION A UN CAPTEUR D'IMAGE
Publication
Application
Priority
- EP 2008062114 W 20080912
- FR 0706463 A 20070914
Abstract (en)
[origin: WO2009034156A2] The invention relates to a memory point for an SRAM-type memory (static memory). The memory point traditionally comprises two inverters (INV, INVB) mounted head-to-tail between two nodes (N and NB), and at least one access transistor (TS) that can be made conductive during a writing phase and connected between a first node (N) and a line of data to be written (DL, DLW), characterised in that it comprises an isolation transistor (TAB) serially inserted between the output of a first inverter (INVB) and a first node (N), the isolation transistor (TAB) being controlled by an isolation signal at the beginning of a writing phase. The power consumption is reduced when the state of the memory point must be inverted. The invention can be used in an image sensor having numerous in-line pixels.
IPC 8 full level
G11C 11/417 (2006.01); G11C 11/419 (2006.01)
CPC (source: EP US)
G11C 11/412 (2013.01 - EP US)
Citation (search report)
See references of WO 2009034156A2
Citation (examination)
ALY R E ET AL: "Novel 7T sram cell for low power cache design", SOC CONFERENCE, 2005. PROCEEDINGS. IEEE INTERNATIONAL HERNDON, VA, USA 25-28 SEPT. 2005, PISCATAWAY, NJ, USA,IEEE LNKD- DOI:10.1109/SOCC.2005.1554488, 25 September 2005 (2005-09-25), pages 171 - 174, XP010861192, ISBN: 978-0-7803-9264-9
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA MK RS
DOCDB simple family (publication)
FR 2921193 A1 20090320; FR 2921193 B1 20110408; EP 2188810 A2 20100526; TW 200929218 A 20090701; US 2010232214 A1 20100916; WO 2009034156 A2 20090319; WO 2009034156 A3 20090604
DOCDB simple family (application)
FR 0706463 A 20070914; EP 08804079 A 20080912; EP 2008062114 W 20080912; TW 97135362 A 20080915; US 67811608 A 20080912