EP 2308051 A1 20110413 - A NAND BASED NMOS NOR FLASH MEMORY CELL/ARRAY AND A METHOD OF FORMING SAME
Title (en)
A NAND BASED NMOS NOR FLASH MEMORY CELL/ARRAY AND A METHOD OF FORMING SAME
Title (de)
AUF NAND BASIERENDE NMOS-NOR-FLASH-SPEICHERZELLE/-MATRIX UND HERSTELLUNGSVERFAHREN DAFÜR
Title (fr)
RÉSEAU/CELLULE DE MÉMOIRE FLASH NON-OU MOS À CANAL N À BASE DE NON-ET SON PROCÉDÉ DE FORMATION
Publication
Application
Priority
- US 2009002817 W 20090507
- US 12685408 P 20080507
Abstract (en)
[origin: WO2009137065A1] A NOR flash nonvolatile memory device provides the memory cell size and a low current program process of a NAND flash nonvolatile memory device and the fast, asynchronous random access of a NOR flash nonvolatile memory device. The NOR flash nonvolatile memory device has an array of NOR flash nonvolatile memory circuits. Each NOR flash nonvolatile memory circuit includes a plurality of charge retaining transistors serially connected in a NAND string. A drain of a topmost charge retaining transistor is connected to a bit line associated with the serially connected charge retaining transistors and a source of a bottommost charge retaining transistor is connected to a source line associated with the charge retaining transistors. Each control gate of the charge retaining transistors on each row is commonly connected to a word line. The charge retaining transistors are programmed and erased with a Fowler- Nordheim tunneling process.
IPC 8 full level
G11C 16/04 (2006.01)
CPC (source: EP)
G11C 11/5642 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); H10B 41/10 (2023.02); H10B 41/30 (2023.02); G11C 16/0433 (2013.01)
Citation (search report)
See references of WO 2009137065A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA RS
DOCDB simple family (publication)
WO 2009137065 A1 20091112; CN 102067235 A 20110518; EP 2308051 A1 20110413; JP 2011523156 A 20110804; KR 20110008297 A 20110126
DOCDB simple family (application)
US 2009002817 W 20090507; CN 200980122962 A 20090507; EP 09743052 A 20090507; JP 2011508504 A 20090507; KR 20107026688 A 20090507