EP 2831919 A4 20160323 - INTEGRATION OF NON-VOLATILE CHARGE TRAP MEMORY DEVICES AND LOGIC CMOS DEVICES
Title (en)
INTEGRATION OF NON-VOLATILE CHARGE TRAP MEMORY DEVICES AND LOGIC CMOS DEVICES
Title (de)
INTEGRATION NICHTFLÜCHTIGER LADUNGSSPEICHERVORRICHTUNGEN UND LOGISCHER CMOS-VORRICHTUNGEN
Title (fr)
INTÉGRATION DE DISPOSITIFS DE MÉMOIRE NON VOLATILE À PIÉGEAGE DE CHARGES ET DISPOSITIFS CMOS LOGIQUE
Publication
Application
Priority
- US 201213436878 A 20120331
- US 2013032777 W 20130318
Abstract (en)
[origin: WO2013148393A1] An embodiment of a method of integrating a non-volatile memory device into a logic MOS flow is described. Generally, the method includes: forming in a first region of a substrate a channel of a memory device from a semiconducting material overlying a surface of the substrate, the channel connecting a source and a drain of the memory device; forming a charge trapping dielectric stack over the channel adjacent to a plurality of surfaces of the channel, wherein the charge trapping dielectric stack includes a blocking layer on a charge trapping layer over a tunneling layer; and forming a MOS device over a second region of the substrate.
IPC 8 full level
H01L 29/792 (2006.01); B82Y 10/00 (2011.01); H01L 21/28 (2006.01); H01L 27/115 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01)
CPC (source: CN EP KR)
B82Y 10/00 (2013.01 - CN EP); H01L 21/8238 (2013.01 - KR); H01L 29/40117 (2019.07 - CN EP); H01L 29/665 (2013.01 - CN EP); H01L 29/66833 (2013.01 - CN EP); H01L 29/792 (2013.01 - CN EP KR); H01L 29/7923 (2013.01 - KR); H01L 29/7926 (2013.01 - CN EP); H10B 43/40 (2023.02 - CN EP); H01L 29/0676 (2013.01 - CN EP); H01L 29/7833 (2013.01 - CN EP)
Citation (search report)
- [XY] US 2006115978 A1 20060601 - SPECHT MICHAEL [DE], et al
- [Y] US 2008293207 A1 20081127 - KOUTNY JR WILLIAM W C [US], et al
- See references of WO 2013148393A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2013148393 A1 20131003; CN 104350603 A 20150211; CN 104350603 B 20170915; EP 2831919 A1 20150204; EP 2831919 A4 20160323; EP 3229276 A1 20171011; JP 2015516679 A 20150611; JP 6465791 B2 20190206; KR 102072181 B1 20200302; KR 102256421 B1 20210526; KR 20150011792 A 20150202; KR 20200012038 A 20200204; TW 201347048 A 20131116; TW I582854 B 20170511
DOCDB simple family (application)
US 2013032777 W 20130318; CN 201380016420 A 20130318; EP 13769241 A 20130318; EP 16188153 A 20130318; JP 2015503361 A 20130318; KR 20147025063 A 20130318; KR 20207002501 A 20130318; TW 102110015 A 20130321