EP 3782205 A1 20210224 - OPTOELECTRONIC DEVICE HAVING A DIODE PUT UNDER TENSILE STRESS BY AN INVERSE PIEZOELECTRIC EFFECT
Title (en)
OPTOELECTRONIC DEVICE HAVING A DIODE PUT UNDER TENSILE STRESS BY AN INVERSE PIEZOELECTRIC EFFECT
Title (de)
OPTOELEKTRONISCHE VORRICHTUNG MIT EINER DURCH EINE INVERSE PIEZOELEKTRISCHE WIRKUNG UNTER ZUGSPANNUNG STEHENDEN DIODE
Title (fr)
DISPOSITIF OPTOELECTRONIQUE A DIODE CONTRAINTE EN TENSION PAR EFFET PIEZOELECTRIQUE INVERSE
Publication
Application
Priority
- FR 1853386 A 20180418
- FR 2019050882 W 20190415
Abstract (en)
[origin: WO2019202250A1] The invention relates to an optoelectronic device (1) comprising: - at least one diode (2) that has a semiconductor portion (20) in which a PN or PIN junction is formed; - a peripheral conductive layer (40) that extends in the main plane in such a way as to surround the semiconductor portion (20); - a peripheral piezoelectric portion (30) that extends in the main plane in such a way as to surround the semiconductor portion (20); - a first polarizing electric circuit (30) capable of generating an electric field in the peripheral piezoelectric portion (30) by applying an electric potential at least to the peripheral conductive layer (40) so as to induce a deformation of the peripheral piezoelectric portion (30) in the direction of the main plane, thus causing a tensile deformation of the semiconductor portion (20) in the main plane.
IPC 8 full level
H01L 31/101 (2006.01); H01L 27/144 (2006.01); H01L 31/028 (2006.01); H01L 31/0352 (2006.01); H01L 31/103 (2006.01); H01L 31/105 (2006.01); H10N 30/093 (2023.01); H10N 30/20 (2023.01); H10N 30/80 (2023.01); H10N 30/853 (2023.01)
CPC (source: EP US)
H01L 27/14603 (2013.01 - US); H01L 27/14649 (2013.01 - US); H01L 31/02005 (2013.01 - US); H01L 31/103 (2013.01 - EP); H01L 31/1037 (2013.01 - US); H01L 31/105 (2013.01 - EP US); H10N 30/093 (2023.02 - US); H10N 30/20 (2023.02 - US); H10N 30/206 (2023.02 - EP); H10N 30/8554 (2023.02 - US); H01L 27/1443 (2013.01 - EP)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2019202250 A1 20191024; CN 112055895 A 20201208; EP 3782205 A1 20210224; FR 3080489 A1 20191025; FR 3080489 B1 20200508; US 2021111205 A1 20210415
DOCDB simple family (application)
FR 2019050882 W 20190415; CN 201980026320 A 20190415; EP 19744752 A 20190415; FR 1853386 A 20180418; US 201917044510 A 20190415