EP 3867951 A1 20210825 - INTEGRATED CIRCUIT AND STANDARD CELL THEREOF
Title (en)
INTEGRATED CIRCUIT AND STANDARD CELL THEREOF
Title (de)
INTEGRIERTE SCHALTUNG UND STANDARDZELLE DAFÜR
Title (fr)
CIRCUIT INTÉGRÉ ET CELLULE STANDARD ASSOCIÉE
Publication
Application
Priority
EP 2018080402 W 20181107
Abstract (en)
[origin: WO2020094220A1] The present invention relates to an integrated circuit, particularly a CMOS integrated circuit, which includes at least one diffusion layer. The diffusion layer may especially be a continuous diffusion layer. The present invention provides accordingly an integrated circuit including: at least one power rail, the at least one diffusion layer, at least one isolation gate provided on the diffusion layer and configured to electrically isolate a first region of the diffusion layer from a second region of the diffusion layer, and at least one gate-via vertically connecting the isolation gate to the power rail.
IPC 8 full level
H01L 27/092 (2006.01); H01L 21/765 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 27/02 (2006.01); H01L 27/088 (2006.01)
CPC (source: EP)
H01L 21/823475 (2013.01); H01L 21/823481 (2013.01); H01L 27/0207 (2013.01); H01L 27/088 (2013.01); H01L 27/11807 (2013.01); H01L 21/765 (2013.01); H01L 21/76895 (2013.01); H01L 21/76897 (2013.01); H01L 21/823437 (2013.01); H01L 21/823828 (2013.01); H01L 21/823871 (2013.01); H01L 21/823878 (2013.01); H01L 27/092 (2013.01); H01L 2027/11875 (2013.01)
Citation (search report)
See references of WO 2020094220A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2020094220 A1 20200514; CN 112970110 A 20210615; CN 112970110 B 20230602; EP 3867951 A1 20210825
DOCDB simple family (application)
EP 2018080402 W 20181107; CN 201880099162 A 20181107; EP 18799753 A 20181107